场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    IRF5851TRPBF

    IRF5851TRPBF

    MOSFET N/P-CH 20V 2.7A 6TSOP

    Infineon Technologies

    0
    IRF5851TRPBF

    规格书

    HEXFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 2.7A, 2.2A 90mOhm @ 2.7A, 4.5V 1.25V @ 250µA 6nC @ 4.5V 400pF @ 15V 960mW -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    IRF7506TRPBF

    IRF7506TRPBF

    MOSFET 2P-CH 30V 1.7A MICRO8

    Infineon Technologies

    0
    IRF7506TRPBF

    规格书

    HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 1.7A 270mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V 180pF @ 25V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount Micro8™
    IRF7338TRPBF

    IRF7338TRPBF

    MOSFET N/P-CH 12V 6.3A/3A 8SO

    Infineon Technologies

    0
    IRF7338TRPBF

    规格书

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 12V 6.3A, 3A 34mOhm @ 6A, 4.5V 1.5V @ 250µA 8.6nC @ 4.5V 640pF @ 9V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7756TRPBF

    IRF7756TRPBF

    MOSFET 2P-CH 12V 4.3A 8TSSOP

    Infineon Technologies

    0
    IRF7756TRPBF

    规格书

    HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 4.3A 40mOhm @ 4.3A, 4.5V 900mV @ 250µA 18nC @ 4.5V 1400pF @ 10V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    IRF7752TRPBF

    IRF7752TRPBF

    MOSFET 2N-CH 30V 4.6A 8TSSOP

    Infineon Technologies

    0
    IRF7752TRPBF

    规格书

    HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.6A 30mOhm @ 4.6A, 10V 2V @ 250µA 9nC @ 4.5V 861pF @ 25V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    IRF7350TRPBF

    IRF7350TRPBF

    MOSFET N/P-CH 100V 2.1A/1.5A 8SO

    Infineon Technologies

    0
    IRF7350TRPBF

    规格书

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel - 100V 2.1A, 1.5A 210mOhm @ 2.1A, 10V 4V @ 250µA 28nC @ 10V 380pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7754TRPBF

    IRF7754TRPBF

    MOSFET 2P-CH 12V 5.5A 8TSSOP

    Infineon Technologies

    0
    IRF7754TRPBF

    规格书

    HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 5.5A 25mOhm @ 5.4A, 4.5V 900mV @ 250µA 22nC @ 4.5V 1984pF @ 6V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    IRF7751TRPBF

    IRF7751TRPBF

    MOSFET 2P-CH 30V 4.5A 8TSSOP

    Infineon Technologies

    0
    IRF7751TRPBF

    规格书

    HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.5A 35mOhm @ 4.5A, 10V 2.5V @ 250µA 44nC @ 10V 1464pF @ 25V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    IRF7910TRPBF

    IRF7910TRPBF

    MOSFET 2N-CH 12V 10A 8SO

    Infineon Technologies

    0
    IRF7910TRPBF

    规格书

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 12V 10A 15mOhm @ 8A, 4.5V 2V @ 250µA 26nC @ 4.5V 1730pF @ 6V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    2N7002DW L6327

    2N7002DW L6327

    MOSFET 2N-CH 60V 0.3A SOT363

    Infineon Technologies

    0
    2N7002DW L6327

    规格书

    OptiMOS™ 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 300mA 3Ohm @ 500mA, 10V 2.5V @ 250µA 0.6nC @ 10V 20pF @ 25V 500mW -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT363-PO
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